Speaker
Description
As a wide bandgap semiconductor material, silicon carbide (SiC) has been widely used in power devices due to its inherent advantages. In recent years, the use of SiC as a replacement for silicon in charged particle detectors for collider experiments has gained increasing attention. However, due to various limitations in SiC processing (such as ultra-low doping epitaxy and high energy ion implantation), fabricating devices with specific structures to meet the demands of charged particle detection remains highly challenging. The capability of future collider detectors to perform 4D tracking (time + position) has become a well-established requirement. Over the past decade, the silicon Low Gain Avalanche Detector (Si LGAD) has been extensively studied for its excellent timing performance and has demonstrated outstanding results in 4D tracking (delete this part). Owing to the unique properties of SiC, a SiC LGAD offers superior theoretical timing performance and operability at room temperature after irradiation compared to the Si LGAD, making it a promising alternative.
In this report, we will present the latest measurement results of the first successful SiC LGADs fabricated by the North Carolina State University, Lawrence Berkeley National Lab collaboration. These results include preliminary performance characterizations of both DC-LGAD's and AC-LGAD's using alpha particles and a ultra-violet transient current technique (UV-TCT), as well as a comparison of charge collection in SiC LGADs with different gain layer doping concentrations. These results provide strong evidence of low-gain carrier multiplication occurring in our SiC LGADs and offer preliminary validation of the ultrafast timing response.
