Speaker
Description
This talk will present initial results from an amorphous selenium (aSe) vertical photodetector with VUV transparent graphene electrode. Our initial results provide proof that graphene can effectively be deposited on aSe and that a proper readout can be obtained with a thin metal electrode grown either below or above graphene. We observed a significant enhancement in the photoinduced signal strength when we increased the area of the top metal anode by depositing graphene. We will also present results from experiments that explored the transport properties of charge carriers inside aSe as a function of the applied electric field, temperature and nature of the metal electrode used to construct the device. Our results can pave the way towards the development of a novel photodetector design that can be incorporated in an integrated charge (Q) and light (L) sensor. Such a detector can result in the realization of pixelated Q+L sensor in large scale noble element TPC’s.
