Speaker
Description
Abstract
Low Gain Avalanche Detectors (LGADs) are silicon-based devices that can achieve good timing resolution due to their unique internal gain. LGADs are proposed for a wide range of fast-timing applications in high energy physics, nuclear physics, and other precision measurements of rare processes. The p-doped gain layer in an LGAD allows generation of a controlled avalanche of charge carriers, with a multiplication factor in the range 10-100. The gain is strongly dependent on the bias voltage, particularly for values close to breakdown voltage. In this study, the gain of LGADs is studied as a function of the bias voltage and as a function of the injected charge. Tests were performed with an infrared laser and a beta source to characterize the gain. Techniques developed in this study expand the characterization of LGAD performance from the case of minimum ionizing particles to the case of highly ionizing particles.
Acknowledgment
The authors wish to thank their colleagues at Brookhaven National Laboratory: Ron Angona and Sean Robinson for sensor fabrication; Don Pinelli, Antonio Verderosa, Joe Pinz and Tim Kersten for sensor mounting. This material is based upon work supported by the U.S. Department of Energy under grant DE-SC0012704. This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704. Participation by M.H.M.F. is supported by U.S. Department of Energy grants DE-SC0012704 and DE-SC0020255.
